temperature buffer

Furthermore, In vitro, the nutrient digestibility was influenced by some factors such as feedstuffs characteristics, sample particle, enzyme activity, enzyme concentration, stirring frequency, stirring time, incubating temperature and buffer solution pH.

体外养分消化率受样品的物理化学特性、样品的粒度、酶活性、酶浓度、底物浓度、pH、温度、动态时间及体外技术等综合因素影响。

Direct electron transfer on the oxidase modified electrode was observed over a wide range of pH, temperature and buffer concentration.

在较宽的pH值、温度和缓冲浓度范围内观察到了氧化酶修饰电极上的直接电子迁移。

Some encouraging results are found in these studies and they are followed as: 1. A high temperature buffer layer growth method was proposed.

在这些研究中，本文获得了以下具有创新性的研究结果：1、本文研究了缓冲层生长温度对氧化锌外延薄膜的影响，提出了一种高温缓冲层生长方法。

The reason is not made clear yet, but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN.

目前，其原因尚不清楚，但是这些结果表明采用HVPE生长方法或用一高温AlN阻挡层可以得到高质量的GaN。

In order to release the stresses originated from the lattice mismatch and reduce the defect densities, sapphire substrate surfaces are preprocessed by H-plasma cleaning, N-plasma nitriding and the low temperature buffer growth.

为了释放因晶格失配产生的应力，以降低在GaN外延膜中引起的缺陷密度，我们对蓝宝石衬底采用了氢等离子体清洗、氮等离子体氮化以及低温生长缓冲层的方法。

The effects of pH and concentration of phosphate buffer solution, SDS micelle concentration, methanol volume fraction, applied voltage and temperature on the separation were studied.

研究了运行缓冲液的pH值、磷酸盐浓度、SDS浓度、甲醇体积分数、分离电压、分离温度等因素对这10种化合物的迁移时间和分离效果的影响。

It is suggested that growth temperature of the AlN buffer layer influences GaN morphology by forming different AlN seed size and density on the Si ( 111) substrate during the initial growth of the buffer layer.

进一步解释了GaN外延层表面形貌中凹坑的形成及凹坑与缓冲层生长温度的关系.结果表明，温度的高低通过影响缓冲层初始成核密度和成核尺寸来影响外延层表面形貌。

The technology of epitaxy growth GaN/ Si ( 111) with high temperature AIN buffer was investigated.

本文主要研究采用高温AlN缓冲层外延生长GaN/Si（111）材料的工艺技术。

It can be concluded that the defects in the low temperature Si buffer will block the motion of misfit dislocation.

由此可以推断出，低温硅（LT-Si）缓冲层中点缺陷对失配位错运动具有阻碍作用。

ZnO thin films were grown on Cu/ Si ( 111) template by atmospheric pressure MOCVD. The effect of the growth temperature of buffer layer on the properties of ZnO films was studied.

采用常压MOCVD方法在Cu/Si（111）基板上生长ZnO薄膜，研究了缓冲层的生长温度对ZnO外延膜性能的影响。

The results showed that the better immobilization conditions were as follows: reactive solution pH 7.0, reactive temperature 37 ℃, reactive time 6 h, potassium phosphate buffer 0.1%.

实验结果表明：反应液pH值7.0，反应温度37℃，反应时间6h，磷酸盐缓冲液0.1%的条件下，固定化细胞具有较高的GSH合成酶活力。

The growth temperature of the GaN buffer layer must be controlled at 550 ℃.

GaN缓冲层生长温度必须控制在550℃。

Effects of some variables such as temperature, buffer concentration and pH on the binding capacity and breakthrough curves of the columns were examined.

同时考察温度、缓冲液浓度及pH值等因素对动态吸附量、突破曲线形态等色谱性能的影响；

The main methods of direct rolling technology for conventional wide strip mill in Europe and America are analyzed. The speed, temperature compensation, buffer. process control and property prediction, etc.

分析了欧美直接轧制技术的主要对策，针对速度补偿、温度补偿、缓冲，过程控制和性能预报等措施加以论述，提出可行的直接轧制方案。

Additionally, the influences of some operational and controlling factors such as temperature, ligand and buffer concentration, as well as data processing method, are also extensively discussed in this article.

另外，对数据处理方法以及测定结合常数的影响因素如温度、配体及缓冲溶液的浓度等也进行了详细评述。

Deposition Temperature and YBiO_3 Buffer Layer Growth for High Temperature Superconducting Tapes

沉积温度对高温超导带材YBiO3缓冲层外延生长的影响

The effect of temperature, pH, buffer species, buffer concentration, ionic strength and light on the stability of gentiopicrin solution were investigated and the most appropriate preservation conditions for TGG were determined. 4.

考察了温度、pH、缓冲盐种类、离子强度、光照等对龙胆苦苷水溶液稳定性的影响，以确定其最适保存条件。

The selectivity of the electrode and the influence of temperature, pH and buffer solution on the electrode signal were investigated experimentally, the optimal test conditions were obtained.

研究了电极的响应曲线、线性范围、选择性、寿命及其工作条件等特性。

A high temperature buffer layer growth method was proposed.

本文研究了缓冲层生长温度对氧化锌外延薄膜的影响，提出了一种高温缓冲层生长方法。

Methods Blood clots thawed in room temperature, homogenized extraction buffer including higher sodium chloride and higher EDTA, the homogenized samples were digested with digestion buffer and extracted with phenol-chloroform.

方法室温自然解冻，机械磨碎，高盐、高EDTA提取液处理，消化液消化，酚氯仿抽提。

The effects of the thickness of high temperature buffer layer, the growth rate of epitaxial layer and the rich Zn environment on the properties of ZnO films grown by AP-MOCVD were investigated.

研究了高温缓冲层厚度、外延层的生长速率以及富Zn环境对ZnO薄膜生长的影响，优化了生长工艺参数。

The two-step growth method is one of the most important techniques to solve the growth of materials with large lattice mismatch, in which low temperature growth of buffer layer is followed by the growth of epilayer at higher temperature.

两步生长法是用来解决晶格失配较大材料的最主要的方法之一：首先在低温下生长缓冲层，然后在较高的温度下生长外延层。

Effects of temperature, buffer solution, pH and the buffer solution concentration were observed.

研究了温度、缓冲体系、缓冲溶液浓度和pH值对电极的影响；

AIM: To observe the effects of different storage time and temperature, different buffer and elution on elastase ( EA) activity in gingival crevicular fluid ( GCF).

目的：观察不同保存温度、时间和不同缓冲液以及不同洗提方法对龈沟液弹性蛋白酶（GCF-EA）活性的影响。